http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110875175-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2019-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110875175-B |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A method of manufacturing a semiconductor device is provided in the present disclosure, which includes providing a substrate; forming a bottom layer on a substrate; forming an intermediate layer on the bottom layer, an upper surface of the intermediate layer including a photosensitive cell having a first end anchored in the intermediate layer and a second end extending away from the upper surface of the intermediate layer; forming a photoresist layer on the intermediate layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photoactive unit, including a photoacid generator, photobase generator, photolysis quencher, or photolysis base, can be anchored to the polymer backbone forming the interlayer by one or more linking groups. The distance that the photosensitive element extends into the photoresist layer can be determined by the length of the linking group. |
| priorityDate | 2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.