http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110850263-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2608 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110850263-B |
| titleOfInvention | Method for performing proton displacement damage equivalence based on grid-controlled LPNP transistor |
| abstract | The invention belongs to the technical field of proton displacement damage, and particularly relates to a method for carrying out proton displacement damage equivalence based on a grid-controlled LPNP transistor, which solves the technical problem of testing the equivalence of proton irradiation displacement damage effects of semiconductor devices. The method for controlling the surface recombination of the modulation transistor by using the grid voltage utilizes a grid control means to inhibit the surface recombination and directly measure the service life of a minority carrier, and realizes the equivalence of a proton displacement damage effect and 1MeV neutron irradiation damage through the functional relation between the service life of the minority carrier and the equivalent neutron fluence of 1 MeV. The grid-controlled charge separation analysis method selected by the invention can simultaneously measure the total dose effect of accumulated ionizing radiation introduced by proton irradiation damage and realize quantitative measurement of the oxide charge density and the interface trap density. |
| priorityDate | 2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 13.