http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110828602-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0272 |
| filingDate | 2019-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110828602-B |
| titleOfInvention | Antimony selenide thin film solar cell and preparation method thereof |
| abstract | The invention relates to an antimony selenide film solar cell and a preparation method thereof, wherein a p-type antimony selenide seed layer is inserted into the antimony selenide thin film solar cell before a p-type antimony selenide absorption layer is grown, and the p-type antimony selenide seed layer and the p-type antimony selenide absorption layer are grown by adopting a single continuous thermal process, so that the crystal grain epitaxy and continuous growth are promoted, and a high-quality antimony selenide thin film with preferred orientation is realized, thereby effectively promoting the extraction and transportation of electrons, and further improving the energy conversion efficiency of an antimony selenide solar cell device. |
| priorityDate | 2019-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.