| abstract |
Disclosed herein are structures and methods for large integrated circuit (IC) dies, as well as related components and devices. For example, in some embodiments, an IC die may include: a first sub-volume including a first electrical structure, wherein the first electrical structure includes a device located in a first portion of a device layer of the IC die; a second subvolume including a second electrical structure, wherein the second electrical structure includes a device located in a second portion of a device layer of the IC die; and including a device located in the first subvolume and the first subvolume A third subvolume of electrical pathways between the two subvolumes; wherein the IC die has an area greater than 750 square millimeters. |