| abstract |
An object of the present invention is to provide an alkaline developing solution that can be used for development after exposure of a photoresist, and simultaneously with the development of the photoresist, the resist underlayer film existing under the photoresist is also treated as a resist underlayer. The resist underlayer film is removed simultaneously with the resist pattern. The solution is a composition for forming a resist underlayer film for lithography, wherein the resist underlayer film is dissolved with an alkaline developer according to a resist pattern together with the upper layer resist when the upper layer resist is developed. The removed silicon-containing resist underlayer film, the above-mentioned composition includes a component (a) and an element (b), and the component (a) is composed of a hydrolyzable silane, a hydrolyzate thereof, a hydrolysis condensate thereof, or a combination thereof. The silane compound, the element (b), is an element that causes dissolution in an alkaline developer. The element (b) that causes dissolution in an alkaline developer is contained in the structure of the compound of the above-mentioned component (a). The element (b) that causes dissolution in an alkaline developer is a photoacid generator. |