| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8205ec6ee1cd95eb60a03826535bad97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G10-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1583171c96e69dd71dd78a7275efc5d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a6340b2d48c7f6075ab2e89f3b8dc57 |
| publicationDate |
2020-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110809738-A |
| titleOfInvention |
Composition for forming resist underlayer film with improved planarization |
| abstract |
An object of the present invention is to provide a step including coating on the upper surface of a semiconductor substrate having a portion with height difference and a portion without height difference, and in the formed resist underlayer film, the portion with height difference and the portion without height difference are provided. The method of reducing the height difference (Iso-dense deviation) (inverse height difference) of the resist underlayer film in the portion without the height difference by 5 nm or more. The solution is a method for reducing the height difference (Iso-dense deviation) of a resist underlayer film, which includes the step of: adding (A) a polymer and (D) a solvent to a combination for forming a resist underlayer film A step of further adding (C) a fluorine-based surfactant to the substance; and applying the composition to which the (C) fluorine-based surfactant is added to a semiconductor substrate having a portion with height difference and a portion without height difference The step of the upper surface reduces the height difference (reverse height difference) of the resist underlayer film between the part having the height difference and the part not having the height difference by 5 nm or more. |
| priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |