http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110797435-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2019-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110797435-B |
| titleOfInvention | Component-adjustable inorganic perovskite photoelectric film, low-temperature preparation method thereof and device application |
| abstract | The invention belongs to the technical field of novel semiconductor material preparation and devices, and particularly discloses a component-adjustable inorganic perovskite thin film, a low-temperature preparation method thereof and application of the device. The method comprises the following steps: CsX and AB are dissolved in an organic solvent, and a precursor solution is obtained after uniform stirring; spin coating the precursor on a conductive substrate; and then annealing the prepared membrane, transferring the sample to an atomic deposition system for ion exchange reaction to obtain the inorganic perovskite photoelectric film with accurate and adjustable components, and successfully applying the inorganic perovskite photoelectric film to a photovoltaic device. The method solves the problem of low solubility in the prior art, improves the uniformity and compactness of the film, adopts the atomic layer deposition temperature which is far lower than 200 ℃, is suitable for both a hard substrate and a flexible substrate, and is more beneficial to realizing the accurate regulation and control of the proportion of halogen elements of inorganic perovskite; in addition, the precursors are all inorganic substances, so that the problem of poor conductivity of the film is solved, and the method has important significance for preparation of inorganic perovskite films and application of devices. |
| priorityDate | 2019-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.