| abstract |
A method of manufacturing a semiconductor device, comprising: forming a first wiring layer on a substrate, the first wiring layer including a first metal wiring and a first interlayer insulating film surrounding the first metal wiring, in the A first via layer is formed on the first wiring layer, and the first via layer includes a first via electrically connected to the first metal wiring and a second interlayer insulating film surrounding the first via; and a second wiring layer is formed on the first via layer, the second wiring layer includes a second metal wiring electrically connected to the first via and a third interlayer surrounding the second metal wiring An insulating film, wherein the third interlayer insulating film contains deuterium and is formed by chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen. |