| abstract |
Embodiments of semiconductor devices and methods of making the same are disclosed. In an example, a semiconductor device includes a NAND memory cell and a first bonding layer including a first bonding contact. The semiconductor device also includes a second semiconductor structure including a DRAM cell and a second bonding layer including a second bonding contact. The semiconductor device also includes a third semiconductor structure including a processor, an SRAM cell, and a third bonding layer including a third bonding contact. The semiconductor device also includes a first bonding interface between the first and third bonding layers, and a second bonding interface between the second and third bonding layers. The first bond contacts are in contact with the first set of third bond contacts at the first bond interface. The second bond contacts are in contact with the second set of third bond contacts at the second bond interface. The first bonding interface and the second bonding interface are in the same plane. |