http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110718645-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
filingDate 2019-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110718645-B
titleOfInvention A kind of preparation method and product of perovskite quantum dot light-emitting diode
abstract The invention belongs to the field of light-emitting diode preparation, and specifically discloses a preparation method and product of a perovskite quantum dot light-emitting diode. The method includes: activating the clean ITO glass surface; depositing a layer of ZnO thin film and an Al 2 O 3 thin film on the surface of the ITO glass after the activation treatment in sequence; spin coating a quantum dot solution on the surface of the Al 2 O 3 thin film to obtain A quantum dot film is obtained; a layer of Al 2 O 3 film is deposited on the surface of the quantum dot film; a layer of TPD hole transport layer, MoO 3 hole injection layer and electrode aluminum are sequentially prepared on the surface of the Al 2 O 3 film. The product of the present invention is prepared by the above-mentioned preparation method. The preparation method of the invention is simple and convenient in process, the prepared product has high carrier injection, transmission capacity and stability, can protect the QLED device from damage, and the introduction of inorganic substances significantly improves the stability of the device. Thereby, the light-emitting performance of the device is improved.
priorityDate 2019-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 45.