http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110718645-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fefd66fdbc3870bbaa8e5a4f87bdb0a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-8426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 |
| filingDate | 2019-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78fdf4997c2177ca389468eea0387626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c66afe998b056b318123a4aaaa1840 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d409b5b746a11b8c1db9d322215db3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde5e89f98fff4dd1c0aae3c74c838a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2419e7a2a856945af54494385bc2b4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdf29067f7f327a066717c4931c0fd70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281dc041833b08c4913f6a723a96334d |
| publicationDate | 2020-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110718645-A |
| titleOfInvention | A kind of preparation method and product of perovskite quantum dot light-emitting diode |
| abstract | The invention belongs to the field of light-emitting diode preparation, and specifically discloses a preparation method and product of a perovskite quantum dot light-emitting diode. The method includes: activating the clean ITO glass surface; depositing a layer of ZnO thin film and an Al 2 O 3 thin film on the surface of the ITO glass after the activation treatment in sequence; spin coating a quantum dot solution on the surface of the Al 2 O 3 thin film to obtain A quantum dot film is obtained; a layer of Al 2 O 3 film is deposited on the surface of the quantum dot film; a layer of TPD hole transport layer, MoO 3 hole injection layer and electrode aluminum are sequentially prepared on the surface of the Al 2 O 3 film. The product of the present invention is prepared by the above-mentioned preparation method. The preparation method of the invention is simple and convenient in process, the prepared product has high carrier injection, transmission capacity and stability, can protect the QLED device from damage, and the introduction of inorganic substances significantly improves the stability of the device. Thereby, the light-emitting performance of the device is improved. |
| priorityDate | 2019-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.