http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110718638-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2018-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc6b9807e9f4c63f85a1b1a4aa84a39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd8cec42f5613a1f41c0bca9936a974 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0623888300e909e2a4f06e8d65621076 |
| publicationDate | 2020-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110718638-A |
| titleOfInvention | Quantum dot light-emitting diode and preparation method thereof |
| abstract | The invention specifically relates to a quantum dot light-emitting diode, comprising a first electrode, a first carrier transport layer, a first quantum dot light-emitting layer, a second carrier transport layer, a second quantum dot light-emitting layer, and a third current carrier Sub transport layer and second electrode; the potential barrier between the HOMO orbital energy level and LOMO orbital energy level of the material of the first carrier transport layer and the functional energy level of the material of the first electrode is ≤ 2eV; the third carrier transport The potential barriers between the HOMO orbital energy level and LOMO orbital energy level of the material of the layer and the functional energy level of the material of the second electrode are ≤2eV; the HOMO orbital energy level of the material of the second carrier transport layer and the first quantum dot emit light The valence band barriers of the materials of the second quantum dot light-emitting layer and the second quantum dot light-emitting layer are all ≤1.5eV, and the LOMO orbital energy level of the material of the second carrier transport layer is the same as the material of the first quantum dot light-emitting layer and the second quantum dot light-emitting layer. The conduction band barriers are all ≤1.5eV. The device can be driven with AC voltage. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111509135-A |
| priorityDate | 2018-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.