| abstract |
A butt contact structure is provided. In one embodiment, the structure includes a first transistor on a substrate, the first transistor includes a first source or drain region, a first gate, and disposed on the first gate and the first source or drain region the first gate spacer in between. The structure includes a second transistor on a substrate, the second transistor including a second source or drain region, a second gate, and a second gate disposed between the second gate and the second source or drain region gate spacers. The structure includes a butt contact disposed over and extending from the first source or drain region to at least one of the first gate or the second gate, a first gate spacer A portion of the mating contact extends a distance into the mating contact to separate the first bottom surface of the mating contact from the second bottom surface of the mating contact. |