http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110698205-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64 |
| filingDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110698205-B |
| titleOfInvention | Preparation method of graphene-toughened silicon carbide ceramic |
| abstract | A preparation method of graphene toughened silicon carbide ceramic comprises the following steps: (A) mixing and crushing silicon carbide powder, graphene powder, a sintering aid and a solvent to prepare silicon carbide slurry; (B) drying, crushing and sieving the silicon carbide slurry to prepare uniformly mixed composite powder; (C) filling the composite powder into a die, and applying unidirectional pressure to obtain a composite powder compact; (D) and (3) placing the die filled with the composite powder compact into a sintering furnace, heating the furnace to the temperature T1 in a vacuum environment, and then performing a heating, pressurizing, cooling and pressureless cyclic sintering process to prepare the graphene toughened silicon carbide ceramic. The method effectively solves the problems of high sintering temperature, low densification speed and low density in the prior art by utilizing a high-temperature pressurization-low-temperature pressureless vacuum circulating sintering technology, and rapidly obtains the graphene toughened silicon carbide ceramic with higher density at a lower temperature. |
| priorityDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.