http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110684964-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D7-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110684964-B |
| titleOfInvention | Method for coating nanocrystalline thin film based on plasma atomic layer deposition and product |
| abstract | The invention belongs to the field of nanocrystalline film preparation, and particularly discloses a method for coating a nanocrystalline film based on plasma atomic layer deposition and a product. The method comprises the following steps: (a) preparing a nanocrystalline film, placing the obtained nanocrystalline film in a reaction cavity of an atomic layer deposition device, and heating; (b) introducing gaseous silane into the reaction cavity to react with the nanocrystalline thin film, and continuously introducing carrier gas in the reaction process to keep the air pressure in the reaction cavity constant; (c) introducing oxygen plasma into the reaction cavity, and continuously introducing carrier gas in the reaction process to keep the air pressure in the reaction cavity constant so as to generate silicon oxide, wherein the silicon oxide is coated on the surface of the nanocrystalline film; (d) and (c) repeating the steps (b) to (c) until the thickness of the silicon oxide reaches a preset thickness value. The method solves the problem that the luminescent property of the nanocrystal is lost due to the fact that the nanocrystal is easy to be corroded by water and oxygen, and has the advantages of being convenient to operate and control, strong in adaptability, low in cost, suitable for mass production and the like. |
| priorityDate | 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.