| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18f636238e834fcd919f0475c6dba40d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-025 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00 |
| filingDate |
2019-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9d9155747a348198a19b35f1a2ca17f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71519ec0825f5b9aaae99a3728d76b5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e8e7ea19b66950da61fa4585c370d90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b9f268423758abaa5a9e6d0a723e0d0 |
| publicationDate |
2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110684528-A |
| titleOfInvention |
A method for improving the stability of perovskite quantum dots based on ion beam irradiation |
| abstract |
The invention relates to the technical field of material technology, in particular to a method for improving the stability of perovskite quantum dots based on ion beam irradiation, comprising the following steps: (1) preparing a CsPbX 3 perovskite quantum dot solution; (2) preparing a solution of perovskite quantum dots; The CsPbX 3 perovskite quantum dot solution prepared in the step (1) is coated on the surface of the substrate and air-dried; (3) the CsPbX 3 perovskite quantum dots are irradiated with an ion beam at room temperature. The method of the invention hinges the ligands around the quantum dots together by ion irradiation, so as to realize the stable existence of the quantum dots on the surface of the solid material substrate; it can help realize the compatibility of the perovskite quantum dots with the existing silicon-based semiconductor technology, and is expected to improve the its practical application prospects. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111421144-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112126280-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111421144-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112126280-B |
| priorityDate |
2019-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |