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filingDate 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110676396-B
titleOfInvention A method for processing perovskite quantum dot light-emitting diodes based on atomic layer deposition
abstract The invention belongs to the technical field related to the preparation of light-emitting diodes, and discloses a perovskite quantum dot light-emitting diode processing method based on atomic layer deposition, which comprises: synthesizing perovskite quantum dots by a thermal injection method; A ore quantum dot light-emitting diode is prepared, and a low-temperature atomic layer deposition process is performed on the surface of the quantum dot film to realize modification and filling; the perovskite quantum dot light-emitting diode is packaged. The invention also discloses a corresponding perovskite quantum dot light-emitting diode product. Through the invention, the luminous efficiency and carrier mobility of the quantum dot film can be effectively improved, the effective isolation of quantum dots and the effective anchoring of ion migration of perovskite quantum dots can be achieved, and the film deposition effect and the film quality can be significantly improved accordingly. , reduce costs, and at the same time have the advantages of improving device packaging effects and water and oxygen barrier capabilities.
priorityDate 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 48.