http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110676384-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_819d2d00412d671253120d16a2f09908 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_209b2897a7bd723c05aacd0b8809ca8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2605c83e038e23227ed6f4042956844c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ace97f94b0c05a027880648e721e353 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e96cfe999c7df9bcc57837d5016b0e23 |
| publicationDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110676384-A |
| titleOfInvention | Two-dimensional organic-inorganic heterojunction encapsulated by boron nitride and preparation method thereof |
| abstract | The invention discloses a two-dimensional organic-inorganic heterojunction encapsulated by boron nitride and a preparation method thereof, belonging to the field of two-dimensional semiconductor materials. The preparation method includes the following steps: transferring the boron nitride to a silicon wafer substrate, and epitaxially growing an organic thin film on the bottom layer boron nitride; using a fine needle to pick up the gold electrode and the top layer boron nitride, and placing it on the second to be transferred. Then, the gold electrode, the top layer of boron nitride and the two-dimensional inorganic material were brought up with a fine needle, and placed on the bottom layer of boron nitride of the organic thin film, and finally the encapsulated heterojunction was placed in a vacuum device, The two-dimensional organic material and/or the two-dimensional inorganic material are closely attached. By using boron nitride as the encapsulation layer instead of the traditional glass film, the present invention can not only play a good encapsulation effect, can isolate the influence of external water and oxygen on the two-dimensional material, but also can increase the electron mobility; The gold electrode is used as a support layer, which is convenient for later removal, and can achieve fast transfer and precise alignment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114203848-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113871484-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114203848-B |
| priorityDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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