| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66295 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222 |
| filingDate |
2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110660734-B |
| titleOfInvention |
Semiconductor structure and manufacturing method thereof |
| abstract |
The invention discloses a semiconductor structure and a manufacturing method thereof. The substrate has a first face and a second face opposite to each other. The bipolar junction transistor is located on the first side of the substrate. The bipolar junction transistor includes a collector, a base, and an emitter. The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. The first interconnection structure is located on the first surface of the substrate and electrically connected to the base. The second interconnect structure is located on the second surface of the substrate and electrically connected to the collector. The first interconnect structure further extends to the second surface of the substrate. The first and second interconnect structures are electrically connected to an external circuit on the second surface of the substrate. The semiconductor structure has better overall efficiency. |
| priorityDate |
2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |