| abstract |
In some embodiments, methods for bonding semiconductor wafers are provided. The method includes forming a first integrated circuit (IC) over a central region of a first semiconductor wafer. A first annular bonding support structure is formed over an annular peripheral region of the first semiconductor wafer, wherein the annular peripheral region of the first semiconductor wafer surrounds a central region of the first semiconductor wafer. The second semiconductor wafer is bonded to the first semiconductor wafer such that the second IC disposed on the second semiconductor wafer is electrically connected to the first IC. Embodiments of the present invention also provide for bonding a support structure and a plurality of semiconductor wafers. |