| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110660652-B |
| titleOfInvention |
Patterning method of semiconductor device |
| abstract |
A method of patterning a semiconductor device is disclosed, which in some embodiments includes patterning a tin oxide layer to define a plurality of mandrels (mandrils) on a target layer; depositing a spacer layer over and along sidewalls of the plurality of mandrels; and patterning the spacer layer to provide a plurality of spacers on sidewalls of the plurality of mandrels. The method also includes removing the plurality of mandrels after patterning the spacer layer. The method also includes patterning the target layer using a plurality of spacers after removing the plurality of mandrels. |
| priorityDate |
2018-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |