| abstract |
The title of the invention of the present application is "semiconductor device and method for manufacturing the same". The present invention relates to a semiconductor device and a method of manufacturing the same. An object of the present invention is to provide a semiconductor device and a method for manufacturing the same at low cost by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide without complicating the manufacturing process. In one of the semiconductor devices of the present invention, a gate is formed on a substrate, a gate insulating film is formed so as to cover the gate, an oxide semiconductor film is formed on the gate insulating film, and a first conductive film and a first conductive film are formed on the oxide semiconductor film. In the second conductive film, the oxide semiconductor film includes at least a crystallized region in the channel formation region. |