| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G39-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G39-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
| filingDate |
2019-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e3b8ca431d2a11bf73e12030185d4df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff9afe46aa95b7c1438862bd0a4092e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3ff0bf20ac8184f0de2383bf6710175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7694d8820c3b4f4b28da57517124a138 |
| publicationDate |
2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110655111-A |
| titleOfInvention |
Method for preparing molybdenum sulfide two-dimensional material by using MOCVD (metal organic chemical vapor deposition) equipment |
| abstract |
The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD equipment, which is used for growing MoS on a Sapphire substrate in multiple steps 2 A two-dimensional material comprising: adopting Sapphire as a substrate; transferring the Sapphire substrate into the MOCVD equipment; introducing N into MOCVD cavity 2 A gas; raising the temperature to reach the constant-temperature growth temperature, wherein the initial pressure in the cavity is 90 Torr; introduction of H 2 S is used as a sulfur gas source; introduction of MO (CO) 6 As a molybdenum gas source, nucleation; reducing the pressure in the cavity step by step to promote the lateral growth of nucleation grains to obtain MoS grown on the Sapphire substrate 2 A two-dimensional material. Book (I)The preparation method provided by the invention has the advantages of simple growth process, controllable material thickness, high quality and the like. By the preparation method provided by the invention, MoS with adjustable forbidden band width and applicable to flexible chip application is grown 2 A two-dimensional material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113981542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111634947-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115404460-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115404460-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111634947-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113073390-A |
| priorityDate |
2019-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |