http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110648923-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110648923-B |
| titleOfInvention | Semiconductor structure and method of making the same |
| abstract | A semiconductor structure and a manufacturing method thereof, wherein the semiconductor structure is disposed on a substrate, comprising a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, and an etching blocking pattern disposed The oxide semiconductor layer and the second metal layer are disposed on the etching stopper pattern. The first metal layer includes gate lines. The gate insulating layer covers the gate lines. The patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode that are electrically connected to the oxide semiconductor pattern. Part of the etch stop pattern is located between the second metal layer and the oxide semiconductor layer. The second metal layer further includes a signal line disposed on the etching stopper pattern and electrically connected to the oxide semiconductor pattern. A method of fabricating a semiconductor structure is also proposed. |
| priorityDate | 2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.