| abstract |
The invention provides a preparation method and application of a lanthanum-doped hafnium dioxide ferroelectric thin film. Firstly, a clear and transparent lanthanum-doped hafnium oxide precursor solution is prepared by using inorganic hafnium salt and inorganic lanthanum salt as raw materials; then the precursor is coated on the treated silicon substrate according to the experimental requirements; finally, it is dried, preheated and annealed. The La‑HfO 2 ferroelectric thin films with different crystal phase structures were obtained by the treatment. The invention can realize precise controllability of film thickness, good film formation uniformity, simple operation, flexible and controllable content of doping elements, simple equipment requirements, low cost, repeatable process, and easy realization of industrialized production. |