| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca46be4e68fa1f5a8b2ef4ab654c490a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F2101-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F2305-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-36 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B11-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B11-091 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F101-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B1-04 |
| filingDate |
2019-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c813b5ff9e87bb5718b5fbac44ab4980
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e7c2b206590e0948f80023b72530aad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a3ae5aa389a3fd8fc211be98686c1d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dcff9016f55d8ee19dbab57cb435753 |
| publicationDate |
2020-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110639557-A |
| titleOfInvention |
A kind of van der Waals heterojunction and its preparation method, anode material, field effect transistor |
| abstract |
The invention belongs to the technical field of polymer materials, and discloses a van der Waals heterojunction and a preparation method thereof, an anode material and a field effect tube. The van der Waals heterojunction is composed of hafnium disulfide and molybdenum disulfide. The synthesis steps of the heterojunction are as follows: using chemical vapor deposition method to prepare high-purity molybdenum disulfide film on SiO2 substrate; Thickness HfS 2 ‑MoS 2 heterojunction. The heterojunction obtained by the method of the invention has high carrier mobility, controllable forbidden band width, high surface activity, and can be used for photoelectric catalytic decomposition of water and pollutants, and can also be used for field preparation effect tube. The growth time can be controlled in the preparation process according to the requirements, so as to obtain heterojunctions with different thicknesses. Based on this heterojunction, a new type of semiconductor field effect transistor is designed. At present, the patent of the present invention has not yet been disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115084470-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112226743-A |
| priorityDate |
2019-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |