http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110620159-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
filingDate 2019-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110620159-B
titleOfInvention Preparation method of P-TOPCon photovoltaic solar cell structure
abstract The invention discloses a preparation method of a P-type crystalline silicon TOPCon battery structure, which is characterized in that the battery structure is an Ag grid line + SiNx layer + N + Layer + local SiO x + Poly layer with Al layer + SiNx layer + Al layer on back 2 O 3 Layer + P + . In addition, the preparation method of the battery is double-sided texturing → single-sided oxidation → single-sided microcrystalline silicon → phosphorus doping&Annealing → front mask → removing unmasked area → cleaning → single-sided N + phosphorus diffusion → removing the mask area to form SiOx + Poly layer → passivation → laser grooving → silk screen printing + sintering. The invention discloses a novel P-TOPCon battery preparation method, namely a selective emitter process for doping polycrystalline silicon in a PERC front surface field, which can effectively improve open-circuit voltage VOC, reduce Rs and improve FF, and the selective polycrystalline silicon doping process can effectively reduce ISC loss, thereby improving efficiency.
priorityDate 2019-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.