http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110596988-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-353 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-0092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-005 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-35 |
| filingDate | 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110596988-B |
| titleOfInvention | Preparation method of on-chip high-quality factor chalcogenide micro-ring resonant cavity |
| abstract | The invention relates to a method for preparing an on-chip high-quality factor chalcogenide micro-ring resonant cavity, and belongs to the technical field of on-chip micro-nano optoelectronic device preparation. The method comprises the following steps: spin coating electron beam glue on the surface of the chalcogenide film, selectively exposing the electron beam glue by electron beams, refluxing by an annealing furnace, etching by reactive ions, spin coating thermosetting polymer on the waveguide structure, annealing by the annealing furnace and the like. The preparation method disclosed by the invention solves the problems of low quality factor and poor performance of international high-nonlinearity photonic devices, is suitable for preparing high-quality and high-nonlinearity annular resonant cavities on chalcogenide films, improves the Q by more than 2 orders of magnitude, obviously improves the application performance of the high-quality and high-nonlinearity annular resonant cavities in the application field of on-chip optoelectronic devices, can be prepared in large batch and is suitable for large-scale photonic integration. |
| priorityDate | 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.