http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110586068-B

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filingDate 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110586068-B
titleOfInvention Ytterbium ion doped and modified BiVO4Preparation method of photoelectrocatalysis electrode, product and application thereof
abstract The invention belongs to the technical field of semiconductor photoelectrocatalysis oxidation, and particularly relates to ytterbium ion doped modified BiVO 4 A preparation method of a photoelectrocatalysis electrode, a product and application. Firstly adopts a hydrothermal method to prepare Yb 3+ Doping modified BiVO 4 And (2) uniformly dispersing the powder in a mixed system of polyethylene glycol and absolute ethyl alcohol in a volume ratio of 2:1 to prepare slurry with moderate viscosity, dripping the slurry on the conductive surface of the FTO conductive glass, uniformly scraping the FTO conductive glass by using a wet film scraper, putting the FTO conductive glass in a constant-temperature forced air drying oven, drying the FTO conductive glass for 6 hours at 80 ℃, and taking the FTO conductive glass out. Placing the mixture in a muffle furnace at room temperature, and roasting at high temperature to obtain Yb 3+ Doping modified BiVO 4 And a photoelectrode. Yb produced by the invention 3+ Doping modified BiVO 4 Photoelectrode is compared with unmodified BiVO 4 The photoelectrode has higher photoelectrocatalysis activity. The method has the advantages of simple operation steps, simple and easily obtained reaction conditions, controllable film thickness, no generation of toxic and harmful substances in the whole preparation process, no pollution to the environment, safety and environmental protection.
priorityDate 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 47.