| abstract |
The invention discloses a perovskite quantum dot thin film and its preparation method and device. The preparation method of the perovskite quantum dot thin film comprises the following steps: dissolving AX, BX 2 and short-chain organic ligands in a solvent to obtain perovskite Mine ABX 3 precursor solution, in which A is a metal cation or an alkyl ammonium ion, B is a divalent metal cation, and X is a halogen anion; the perovskite quantum dot film is grown in situ in combination with the anti-solvent method during the spin coating process, and Heat annealing. The invention has the advantages of in-situ growth of perovskite quantum dots in the process of preparing thin films by spin coating, good film-forming properties, high fluorescence quantum efficiency, simple preparation process, adjustable luminescent wavelength, and short-chain organic ligands can be used to make The improved conductivity of the quantum dot film is conducive to the preparation of more efficient and stable perovskite light-emitting diodes. |