http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110534558-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2019-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110534558-B |
| titleOfInvention | A gated bipolar-field effect composite gallium nitride vertical double-diffused metal oxide semiconductor transistor |
| abstract | The invention discloses a gate-controlled bipolar-field effect composite gallium nitride vertical double-diffused metal oxide semiconductor transistor. The device replaces the electrode connection method in which the base area and the source electrode are short-circuited in the traditional gallium nitride VDMOS by using the electrode connection method in which the base area is connected with the gate electrode. When the device works in the off state, the withstand voltage characteristics of the device are consistent with those of traditional gallium nitride VDMOS. When the device works in the open state, since the gate is connected to the base region, when the gate voltage is connected to the gate, the base region is also connected to a certain voltage, so that the parasitic bipolar transistor of the device is turned on, providing a new conduction channel; at the same time, the channel of the device can also be normally turned on for conduction. Compared with the traditional gallium nitride VDMOS device, the device greatly improves the on-current of the device while ensuring the device has the same breakdown voltage, and greatly improves the turn-on performance of the gallium nitride transistor. |
| priorityDate | 2019-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.