http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110527977-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate | 2019-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110527977-B |
| titleOfInvention | Preparation method of strong-texture tin selenide macroscopic thermoelectric thin film |
| abstract | The invention discloses a preparation method of a strong texture tin selenide macroscopic thermoelectric film, and belongs to the technical field of film material preparation. The method adopts a chemical vapor deposition method, uses commercial tin selenide particles as a raw material, uses a peeled fluorine crystal mica sheet as a substrate, uses argon gas as a carrier gas, and prepares a continuous and compact tin selenide film in a low-pressure oxygen-free environment in one step. The film is in (400) strong texture, and the in-plane orientation of the tin selenide crystal is kept inside the crystal grains. The thermoelectric figure of merit ZT of the thin film was 0.15 at a temperature of 550K. The method is simple and easy to operate, has low requirements on equipment and preparation environment, and short preparation period, and is a method for preparing the high-quality flexible tin selenide film on a large scale. |
| priorityDate | 2019-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.