http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110506357-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M2300-0085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-4235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-64 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-0568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-0565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-052 |
| filingDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110506357-B |
| titleOfInvention | Semi-secondary batteries and secondary batteries |
| abstract | The invention can improve the safety of the secondary battery. A semi-secondary battery comprising: an electrode with an electrode collector and an electrode mixture layer, and an insulating layer formed on the electrode, the tensile strength of the electrode collector when using a nail with a tip angle of 30° is between Below 16N, the insulating layer has a low melting point material, and the melting point of the low melting point material is below the temperature at which the valence number of the positive electrode active material decreases. Preferably, the low-melting point material is P(VDF-HFP), the addition amount of the low-melting point material in the insulating layer is 4wt% to 15wt%, the thickness of the electrode collector is below 15 μm, and the electrode collector is a positive electrode collector. |
| priorityDate | 2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 145.