http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110494992-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate | 2018-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110494992-B |
| titleOfInvention | Semiconductor device and light emitting device package including the same |
| abstract | One embodiment relates to a semiconductor device and a light emitting device package including the same. A semiconductor device according to an embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including a V-shaped pit; an active layer disposed on the second semiconductor layer; and a third semiconductor layer on the On the active layer, the band gap is wider than the band gap of the active layer; the fourth semiconductor layer, the band gap of which is narrower than the band gap of the third semiconductor layer on the third semiconductor layer; the fourth semiconductor layer, located in the third semiconductor layer On the semiconductor layer, its band gap is narrower than that of the third semiconductor layer; wherein the third semiconductor layer and the fifth semiconductor layer comprise aluminum components, and the band gap of the fifth semiconductor layer is equal to or wider than the band gap of the third semiconductor layer gap. The semiconductor device according to this embodiment can not only improve the hole injection efficiency through the 2DHG effect, but also increase the injection of carriers injected through the V-shaped pit, thereby improving the luminous efficiency. |
| priorityDate | 2017-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.