| abstract |
An object of the present invention is to provide a composition for forming a resist underlayer film from which mask residues after photolithography can be removed only with a chemical solution without etching. The solution is a composition for forming a silicon-containing resist underlayer film, characterized in that it is used for forming a silicon-containing resist underlayer film, and the silicon-containing resist underlayer film is prepared by a photolithography process. A film used as the mask layer in the step of removing the mask layer with a chemical solution containing hydrogen peroxide after the pattern is transferred to the lower layer, wherein the composition contains polysiloxane, and the polysiloxane contains: A structural unit containing a functional group containing a carbonyl group. In the above-described composition for forming a silicon-containing resist underlayer film, the structural unit containing a carbonyl group-containing functional group is a structural unit containing a cyclic acid anhydride group, a cyclic diester group, or a diester group. The polysiloxane further includes a structural unit including an amide group-containing organic group. The amide group is a sulfonamide group or a diallyl isocyanurate group. |