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filingDate 2019-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110483044-B
titleOfInvention high-Q-value microwave dielectric ceramic and aluminum ultralow-temperature co-firing method and high-Q-value microwave dielectric ceramic preparation method
abstract The invention relates to a ceramic and aluminum ultralow temperature co-firing method and a ceramic preparation method, in particular to a high Q microwave dielectric ceramic and aluminum ultralow temperature co-firing method and a high Q microwave dielectric ceramic preparation method 4 Fully mixing the ceramic powder with a solvent, sequentially adding a dispersing agent, a binder, a plasticizer and a defoaming agent, and continuously mixing for 8-12 hours to obtain CuMoO 4 The casting slurry of (4); CuMoO 4 The casting slurry adopts the casting forming process to prepare CuMoO 4 A green tape; CuMoO 4 Cutting the green porcelain tape, and cutting the cut CuMoO 4 The green ceramic tape adopts a screen printing process to print a circuit by using aluminum paste; CuMoO finished by opposite-screen printing process 4 Laminating and removing the glue from the raw ceramic tape, and filling the raw ceramic tape into an electric plasma sintering (SPS) mould; the high-Q microwave dielectric ceramic can be co-fired with aluminum in 3-5 minutes at the temperature of below 600 ℃, so that the sintering temperature and the sintering time of the multilayer microwave component are greatly reduced.
priorityDate 2019-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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