http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110462788-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68304
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2018-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ff149d7cb1f1d7c3fa2b8ceee4e1ce7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc6f4b92f4bedcfc1171579393bb3327
publicationDate 2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110462788-A
titleOfInvention Porous Semiconductor Processing Substrates
abstract An integrated circuit (IC) may include an active device layer on a front side surface of a semiconductor device substrate. The IC may also include a front-side dielectric layer having a first surface opposite the second surface, the first surface contacting the active device layer. The IC may also include a porous semiconductor handle substrate in contact with the second surface of the front-side dielectric layer. The porous semiconductor handle substrate may be uniformly doped.
priorityDate 2017-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017033135-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013061920-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012176030-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016079183-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008197447-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 44.