http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110459477-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85e4740d8eb8981b7846e1887e6c82b4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c90624fee08ef59700ec274db0afd2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5599e17943ff783d9d0aefc21c7b4e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f37ae8819d2c839e5d645819fddc60e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dca137e39f5a72e11dadf1fe38f6d522 |
| publicationDate | 2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110459477-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The invention discloses a manufacturing method of a semiconductor device. The steps of forming an embedded epitaxial layer of the semiconductor device include: step 1, defining a formation area of the embedded epitaxial layer on a silicon substrate; step 2, using the first dry The first groove is formed by the silicon etching process, and the cross-sectional structure of the first groove is square or U-shaped; step 3, the second wet silicon etching process is used to etch the first groove into a cross-sectional structure showing the shape of a square. Σ-shaped second groove; step 4, enlarging the second groove, including sub-steps: step 41, using a thermal oxidation process of silicon to form a thermal oxide layer on the inner side of the second groove; step 42, Remove the thermal oxide layer; Step 43, use the third wet silicon etching process to continue to etch the silicon to expand the second groove for the second time; Repeat steps 41 to 43 above 0 times; Step 5, in the second groove The trench is filled with an embedded epitaxial layer. The invention can increase the volume of the embedded epitaxial layer and improve the performance of the device. |
| priorityDate | 2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.