http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110448584-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K36-258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F26B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F26B5-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K36-258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F26B5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F26B23-00 |
| filingDate | 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110448584-B |
| titleOfInvention | Production method of high-quality pseudo-ginseng decoction pieces |
| abstract | The invention discloses a production method of high-quality pseudo-ginseng decoction pieces, which comprises the following steps: digging Notoginseng radix, and cleaning the fresh Notoginseng radix; primarily drying the primarily cleaned pseudo-ginseng; carrying out vacuum freeze drying on the pseudo-ginseng subjected to preliminary drying, wherein the vacuum freeze drying comprises a quick-freezing section, a sublimation section and an analysis drying section; wherein, quick-freeze section includes the following step: spreading the primarily dried pseudo-ginseng into a material tray, freezing the material to minus 40-50 ℃, and preserving heat for 3-5 hours; the sublimation section comprises the following steps: starting a freeze dryer cold trap ice catching system to reduce the temperature to 70-80 ℃ below zero; then starting a sublimation program; starting a material heating system, opening a butterfly valve between the bin and the cold trap, starting a sublimation drying process, and keeping sublimation till eutectic resistance shows 20 MOmega; the desorption drying section comprises the following steps: controlling a freeze dryer to heat the material to 40-45 ℃, and keeping the temperature until the crystal resistance shows 30 MOmega; and carrying out fluidized drying and vacuum belt drying on the pseudo-ginseng after vacuum freeze drying. |
| priorityDate | 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.