http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110429184-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_366759959a879950036c4e69dc8fd483 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M14-005 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00 |
| filingDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2322b7e7a05200c03d37d1f0e6bc2646 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5611643b41bfe2a10f67e5307f79a97b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_012290e7bd94eee79f37a35e630dd326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e5f84223f8f436379bfda9d85bf9048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d46c89052b72844efcbc5dfc1de70aa4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2716f4567255a0adaaa5e9ab6ff7bcf1 |
| publicationDate | 2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110429184-A |
| titleOfInvention | A method for improving carrier separation efficiency of FTO transparent conductive electrodes |
| abstract | The invention discloses a method for improving the carrier separation efficiency of an FTO transparent conductive electrode, comprising the following steps: S1. cleaning the FTO glass with a cleaning agent, and drying the transparent conductive substrate after cleaning; S2. making the transparent conductive substrate in S1 Fix it on the sample tray and send it into the etching chamber, use DC power supply oxygen plasma to etch the transparent conductive substrate, and form a SnO2 layer on the surface of the transparent conductive substrate after etching. The specific etching conditions are: high-purity oxygen in the etching atmosphere, The gas flow rate is 50‑120 sccm and the gas pressure is 5‑20 Pa. DC power oxygen plasma etching can form a rougher surface on the surface of the FTO transparent conductive electrode, which increases the contact area with the subsequent film and is more conducive to the separation of carriers. Therefore, the method proposed in the present invention can significantly increase the carrier separation efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111359609-A |
| priorityDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.