http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110400802-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8aca0957aa073108d700f555a4c0dc2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4eba2e611dc5a174194a616eda9072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2735e4a90ca9f5fc30aefde5dd34a53 |
| publicationDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110400802-A |
| titleOfInvention | Novel common drain dual MOSFET structure and forming method thereof |
| abstract | The invention discloses novel common drain dual MOSFET structures and forming method thereof, are related to the technical field of analog circuit and digital circuit.Novel common drain dual MOSFET structure, pass through FET1 and FET2 unit close to each other, so that electric current is all being to flow in wafer between adjacent FET1 and FET2 unit, the transmission range of electric current in the medium is substantially reduced in this way, so as to avoid conducting resistance caused by the electric current in the medium conveying of long range, simultaneously the influence of the transmission range of wafer thickness and electric current is become smaller, so that wafer is without being made thin, to reduce technology difficulty, furthermore in the FET1 and FET2 that do not need larger area while the thick metal for not needing backside of wafer, therefore the MOSFET of finished product is avoided on wafer by stress influence, the warpage of wafer is avoided simultaneously. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115995391-A |
| priorityDate | 2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 17.