http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110364525-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110364525-B |
| titleOfInvention | Semiconductor structure and manufacturing method thereof |
| abstract | The invention provides a semiconductor structure and a manufacturing method thereof, comprising the following steps: a substrate including a first region and a second region; a first trench formed in the substrate, located in the first region, and surrounded by a first protrusion structure; a second trench formed in the substrate and located in the second region and surrounded by a second protrusion structure, wherein the depth of the second trench is greater than that of the first trench; a first silicon oxide layer formed on the top of the first protruding structure; a second silicon dioxide layer formed on the top of the second protruding structure; a first dielectric layer formed on the first silicon oxide layer; and a second dielectric layer formed on the second silicon dioxide layer, wherein the thickness of the first dielectric layer is larger than that of the second dielectric layer. |
| priorityDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.