http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110311007-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 |
| filingDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110311007-B |
| titleOfInvention | Quantum dot near-infrared photoelectric detector and preparation method thereof |
| abstract | The invention provides a quantum dot near-infrared photoelectric detector which comprises a conductive substrate layer (1) and is characterized in that a first electron transmission layer (2), a metal nanoparticle layer (3), a second electron transmission layer (4), an infrared quantum dot layer (5) and a metal electrode (6) are sequentially arranged above the conductive substrate layer (1) from bottom to top. The preparation method of the quantum dot near-infrared photoelectric detector comprises the steps of carrying out oxygen plasma treatment on the conductive substrate layer, preparing the composite electron transmission layer, preparing the quantum dot infrared absorption layer and evaporating the metal electrode. The quantum dot infrared photoelectric detector has the advantages of high quantum efficiency (8000%), low dark current and high response speed, and has a good application prospect in the field of near-infrared light spot detection. |
| priorityDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.