http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110295348-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2501a874894b3dfdc1edc72a1c72d402 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-28 |
| filingDate | 2019-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fde43dfe691bcf0e0107476d22873252 |
| publicationDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110295348-A |
| titleOfInvention | A method for preparing HfO2 thin film by pulsed laser molecular beam epitaxy |
| abstract | The invention discloses a method for preparing an HfO 2 -based thin film by using pulsed laser molecular beam epitaxy, and belongs to the technical field of material preparation. Taking YSZ as the substrate, firstly, the substrate is cleaned and annealed to fully remove the internal stress and surface organics of the substrate; then the metal hafnium and doping elements are used as the target, and the pulsed laser molecular beam is used in the ultra-vacuum state. The HfO 2 -based thin film is grown on the surface of the substrate by epitaxy; then the grown thin film is subjected to in-situ annealing treatment to obtain a stable HfO 2 -based thin film. The invention adopts the combination of pulsed laser deposition and molecular beam epitaxy, combined with real-time monitoring by a reflection high-energy electron diffractometer, and realizes precise control of the atomic scale epitaxial growth of thin films by optimizing oxygen pressure, laser energy, substrate temperature and annealing temperature. It has the advantages of high purity and controllable layered structure, and provides ideas for the basic research of the corresponding laser-substance interaction and film formation process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110904411-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111500987-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111500987-A |
| priorityDate | 2019-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.