| abstract |
The invention discloses a metal porphyrin-based heterojunction memristor and a preparation method and application thereof. The memristor comprises a bottom electrode, a heterojunction layer, a metal oxide layer and a top electrode sequentially arranged from bottom to top ; The heterojunction layer includes two metal porphyrin layers for regulating the electrical properties of the memristor, and the metal oxide layer is used for providing ions and vacancies required for the operation of the memristor. The metal porphyrin heterojunction memristor provided by the invention has a simple preparation process, stable performance, is suitable for flexible devices, can be processed in a large area, has variable and adjustable performance indicators, and has voltage-dependent filtering characteristics; The stability and performance are very high. |