http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110283274-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F232-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-22 |
| filingDate | 2019-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110283274-B |
| titleOfInvention | ArF photoresist capable of obtaining Trench and Hole patterns below 90nm, preparation method and application thereof |
| abstract | The invention discloses a photoresist capable of obtaining Trench and Hole patterns below 90 nm, a preparation method and application thereof. The compound comprises at least two of the following structural units: (a1): having an acidic group generated by hydrolysis (a2): a structural unit capable of forming a rigid main chain; (a3): a structural unit with a cyclic group; if included, the molar proportion of the structural unit (a2) is 1 to 80 %; if included, the molar proportion of the structural unit (a3) is 20-99%. Compared with the prior art, the compounds of the solution of the present invention can be used to obtain high-resolution Trench and hole patterns below 200nm, the highest resolution is 46nm diameter Hole, the resolution of Iso space can reach 120nm, DOF 200nm. |
| priorityDate | 2019-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 87.