| abstract |
The invention relates to a power semiconductor device, a power semiconductor module and a processing method. A power semiconductor device according to the present invention includes: a first load terminal structure and a second load terminal structure arranged separately therefrom; and a semiconductor structure electrically coupled to each of the first load terminal structure and the second load terminal structure, and carrying a load current, the first load terminal structure includes: a conductive layer in contact with the semiconductor structure; a bond block contacted by an end of at least one bond wire and receiving a load current from at least one of the at least one bond wire and the conductive layer at least a portion; and a support block having a hardness greater than that of each of the conductive layer and a joint block mounted on the conductive layer via the support block, the joint block and the conductive layer comprising copper, the support block being parallel to the flow direction of the load current The thickness in the direction of is less than one tenth of the thickness of the bonding block in the direction parallel to the flow direction of the load current. |