http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110247301-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b56caeb3b6c308d98e38ba1dbe6249ae |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| filingDate | 2019-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c725b64899b885c00abd86a095a3ea05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d120430239bfe3811bba6f929e52b83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dc63ca9b9764cf1b713f7a1d8114862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2956844dc382189f56342e35aecc13bc |
| publicationDate | 2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110247301-A |
| titleOfInvention | A kind of Distributed Feedback Laser of wide temperature range and preparation method thereof |
| abstract | The present invention provides a kind of Distributed Feedback Laser of wide temperature range, the epitaxial layer structure of the Distributed Feedback Laser includes non-InP substrate, and being cascading on the non-InP substrate has N-type articulamentum, grating buried layer, N-type grating layer, N-type limiting layer, lower waveguide layer, Quantum Well, upper ducting layer, p-type upper limiting layer, p-type corrosion barrier layer, p-type articulamentum, the first p-type potential barrier graded bedding, the second p-type potential barrier graded bedding and p-type ohmic contact layer.Grating used by the laser is that N-type semiconductor material can work so that the Distributed Feedback Laser of N grating has lower lasing threshold and smaller dead resistance within the scope of wider temperatureļ¼Using flip-over type epitaxial growth regime is used, P-type layer, regrowth N-type preparing grating layer are first grown, place of the quantum well layer before preparing grating layer is grown during prolonging, and material interface is smooth, and quality of materials is good, and defect concentration is small. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113594858-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112366520-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112366520-B |
| priorityDate | 2019-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.