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filingDate 2019-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110228822-A
titleOfInvention A ferromagnetic/antiferromagnetic heterojunction with exchange bias effect and its preparation
abstract The invention belongs to the field of magnetic materials, and more specifically relates to a ferromagnetic/antiferromagnetic heterojunction with exchange bias effect and its preparation. The multiferroic heterojunction has a MFe 2 O 4 /BiFeO 3 bilayer film structure, in which MFe 2 O 4 is used as a ferromagnetic layer, BiFeO 3 is used as an antiferromagnetic layer, and M is Ni or Co. The inverse spinel ferrite MFe 2 O 4 (M=Co, Ni) with a high Curie temperature is selected as the ferromagnetic material, and the Curie temperature of MFe 2 O 4 is close to the Neel temperature of BiFeO 3 . It has excellent ferromagnetism at room temperature and has great potential to increase the cut-off temperature of the system. The coercive field H C of the multiferroic heterojunction provided by the present invention, CoFe 2 O 4 /BiFeO3 bilayer film=15.84KOe, and also observed obvious exchange bias field (H EB (3K)=- 142.5Oe).
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