http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110224070-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2018-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110224070-B |
| titleOfInvention | QLED device, manufacturing method and display device |
| abstract | The present invention relates to a QLED device, a preparation method and a display device. The QLED device includes an anode layer, a hole injection layer, a quantum dot light-emitting layer and a cathode layer, and the hole injection layer includes at least partially reduced molybdenum oxide; Partially reduced molybdenum oxide has the chemical formula HxMoOy . The above-mentioned QLED device, because partially reduced molybdenum oxide is added to the hole injection layer, and the partially reduced molybdenum oxide will have a shallow energy level gap state, so compared with the traditional inorganic injection layer material, the hole density can be significantly improved. Injection capability to improve device performance. |
| priorityDate | 2018-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.